BSP51 数据手册

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 80V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 60V 集电极连续输出电流IC Collector Current(IC)| 1A Q1基极输入电阻R1 Input Resistance(R1)| 200MHz Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 2000 Q1电阻比(R1/R2) Q1 Resistance Ratio| 1300mV Q2基极输入电阻R1 Input Resistance(R1)| 1500mW Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| Features • NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 ... BSP62 (PNP) Q2电阻比(R1/R2) Q2 Resistance Ratio| 特点 •NPN硅达林顿晶体管 •高集电极电流 •低集电极 - 发射极饱和电压 •互补类型：BSP60... BSP62（PNP） 直流电流增益hFE DC Current Gain(hFE)| 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| Description & Applications| 描述与应用|