2SA1384 数据手册 - Toshiba（东芝）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −300V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A 截止频率fTTranstion Frequency(fT) | 70MHz 直流电流增益hFEDC Current Gain(hFE) | 50~150 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V 耗散功率PcPoWer Dissipation | 500mW/0.5W Description & Applications | Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) • Complementary to 2SC3515 • Small flat package • PC = 1.0 to 2.0 W (mounted ceramic substrate) 描述与应用 | PNP硅三重扩散类型（PCT程序） 高电压控制应用 等离子显示器，数码管驱动器应用 阴极射线管的亮度控制应用 •高电压：VCBO=-300 V VCEO=-300 V •低饱和电压VCE（星期六）=-0.5 V（最大值） •小集电极输出电容：COB= 6 PF（典型值） •互补2SC3515