2SC3356 数据手册 - NEC（日本电气）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A 截止频率fTTranstion Frequency(fT) | 7GHz 直流电流增益hFEDC Current Gain(hFE) | 50~300 管压降VCE（sat）Collector-Emitter Saturation Voltage | 10V 耗散功率PcPower Dissipation | 200mW/0.2W Description & Applications | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain • High power gain 描述与应用 | 微波低噪声放大器 NPN硅外延晶体管 说明 2SC3357 NPN硅外延晶体管设计的低噪声放大器在VHF，UHF和CATV频带。它具有大动态范围和良好的流动特性。 特点 •低噪声和高增益 •高功率增益