2SD1620 数据手册 - Sanyo Semiconductor（三洋）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 30V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 20V 集电极连续输出电流ICCollector Current(IC)| 3A 截止频率fTTranstion Frequency(fT)| 200MHz 直流电流增益hFEDC Current Gain(hFE)| 140~210 管压降VCE（sat）Collector-Emitter Saturation Voltage| 300mV/0.3V 耗散功率PcPower Dissipation| 500mW/0.5W Description & Applications| NPN Epitaxial Planar Silicon Transistor 1.5V ，3V strobe application featrues

● large current capicity and high resistance to breakdown

● less power dissipation because of low Vce ，permitting more flashes of light to be emitted

● excellent linearity of hFE in the region from low current to high current

● ultrasmall size supports high density ,ultrasmall sized hybird ic designs 描述与应用| NPN平面外延硅晶体管 1.5V，3V频闪应用 featrues

●大电流容量为和高耐击穿

●功耗低，允许发出闪烁的光，因为低Vce

●卓越的线性度在该地区低电流到大电流HFE

●超小尺寸支持高密度，超小尺寸摄录IC设计