2SJ185 数据手册 - NEC（日本电气）

最大源漏极电压VdsDrain-Source Voltage| -50V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 7V 最大漏极电流IdDrain Current| -100mA/-0.1A 源漏极导通电阻RdsDrain-Source On-State Resistance| 13Ω -10mA,-4V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1.2--2.0V 耗散功率PdPower Dissipation| 200mW/0.2W Description & Applications| MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Directly driven by ICs having a 3V power supply Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor Complementary to 2SK1399 描述与应用| MOS场效应晶体管 P-通道 MOS FET 高速开关 直接驱动3V电源IC 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数量通过省去偏置电阻 对管是2SK1399