2SJ204 数据手册 - NEC（日本电气）

最大源漏极电压VdsDrain-Source Voltage | -30V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V 最大漏极电流IdDrain Current | -200mA/-0.2A 源漏极导通电阻RdsDrain-Source On-State Resistance | 6Ω @-1A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.4--2.4V 耗散功率PdPower Dissipation | 200mW/0.2W Description & Applications | MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance 描述与应用 | MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻