集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V
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●集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V
●集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A
●基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm
●基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm
●电阻比(R1/R2) Resistance Ratio| 0.1
●直流电流增益hFE DC Current Gain(hFE)| 70
●截止频率fT Transtion Frequency(fT)| 160MHz
●耗散功率Pc Power Dissipation| 0.25W/250mW
●Description & Applications| Feature • PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )
●描述与应用| 特点 •PNP硅数字晶体管 •开关电路,逆变器,接口电路,驱动电路 •内置偏置电阻(R1=4.7kΩ上,R2=47KΩ)