BF1102R 数据手册 - NXP（恩智浦）

最大源漏极电压VdsDrain-Source Voltage| 7V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 6~15V/6~15V 最大漏极电流IdDrain Current| 40mA 源漏极导通电阻RdsDrain-Source On-State Resistance| 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.3~1V 耗散功率PdPower Dissipation| 200mW/0.2W Description & Applications| Dual N-channel dual gate MOS-FETs FEATURES Two low noise gain controlled amplifiers in a single package Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment. 描述与应用| 双N沟道双栅MOS场效应管 特点 两个低噪声增益控制放大器，在一个单一的 包 特别设计的5 V应用 高级交叉调制性能在AGC 高正向转移导纳 高正向转移导纳输入电容比。 应用 增益控制的低噪声放大器的VHF和UHF应用如电视调谐器和专业的通信设备。