BF1108 数据手册 - NXP（恩智浦）

最大源漏极电压Vds Drain-Source Voltage| 3V

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●最大栅源极电压Vgs(±) Gate-Source Voltage|

●最大漏极电流Id Drain Current| 10mA

●源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 20Ω@ VGS = -0V,ID = -1mA

●开启电压Vgs（th） Gate-Source Threshold Voltage|

●耗散功率Pd Power Dissipation|

●Description & Applications| General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Features Specially designed for low loss RF switching up to 1 GHz Applications Various RF switching applications such as:Passive loop through for VCR tuner、Transceiver switching

●描述与应用| 一般说明 这些开关是耗尽型场效应晶体管（FET）和一个带开关二极管SOT143B（BF1108）或SOT143R（BF1108R）包的组合。低损耗和高隔离这些设备的能力，提供优异的射频切换功能。从地面二极管可以隔离MOSFET栅极，导致低的损失。集成二极管之间的栅极和源极，栅极和漏极之间，防止过高的输入电压浪涌。 特点 专为低损失高达1 GHz RF开关 应用 各种射频开关应用，如：无源环通VCR调谐器，收发器开关