BF904 数据手册 - NXP（恩智浦）

最大源漏极电压Vds Drain-Source Voltage| 7V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 最大漏极电流Id Drain Current| 30mA 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.3~1.2V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| N-channel dual gate MOS-FETs VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source. 描述与应用| N沟道双栅MOS场效应管 VHF和UHF的应用3到7 V电源电压 诸如电视调谐器和专业的通信设备 特点 •专为使用5 V电源电压 •短沟道晶体管的输入电容比具有高传输导纳 •低噪声增益控制放大器高达1 GHz •高级交叉调制性能在AGC。 应用 •VHF和UHF具有3至7 V电源电压，例如电视调谐器和专业的通信设备的应用程序。 说明 增强型场效应晶体管在一个塑料的超小型的SOT143B SOT143R包。该晶体管包括一个放大器的MOS-FET的源。