BF909WR 数据手册 - NXP（恩智浦）

最大源漏极电压Vds Drain-Source Voltage| 7V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 最大漏极电流Id Drain Current| 40mA 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.3-1/0.3-1.2V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| N-channel dual gate MOS-FETs VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. FEATURES • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC 描述与应用| N沟道双栅MOS场效应管 VHF和UHF的应用3到7 V电源电压 诸如电视调谐器和专业的通信设备 •专为使用5 V电源电压 •高正向转移导纳 •具有较高的正向传输的短沟道晶体管 准入输入电容比 •低噪声增益控制放大器高达1 GHz •高级交叉调制性能在AGC