类型 | 描述 |
---|
安装方式 | Surface Mount |
引脚数 | 4 Pin |
封装 | SOT-143 |
针脚数 | 4 Position |
极性 | N-Channel |
功耗 | 200 mW |
漏源极电压(Vds) | 12 V |
连续漏极电流(Ids) | 30.0 mA |
工作温度(Max) | 150 ℃ |
工作温度(Min) | -65 ℃ |
耗散功率(Max) | 200 mW |
类型 | 描述 |
---|
产品生命周期 | Unknown |
包装方式 | Cut Tape (CT) |
长度 | 3 mm |
宽度 | 1.4 mm |
高度 | 1 mm |
最大源漏极电压Vds Drain-Source Voltage| 12V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 最大漏极电流Id Drain Current| 30mA 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs(th) Gate-Source Threshold Voltage| 2V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| Silicon N-channel dual-gate MOS-FETs VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage,such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated diodes between gates and source. 描述与应用| 硅N沟道双栅MOS场效应管 VHF和UHF的应用程序具有12伏电压的电源电压, 诸如电视调谐器和专业的通信设备。 特点 •短沟道晶体管输入电容比具有较高的正向传输导纳 •低噪声增益控制放大器高达1 GHz。 应用 •VHF和UHF应用具有12伏电压的电源电压,如电视调谐器和专业的通信设备。 说明 耗尽型场效应晶体管在一个塑料超小型SOT143封装SOT143R相互连接的源和衬底。晶体管保护,以防止过高的输入电压浪涌门和源之间的集成二极管。
NXP(恩智浦)
15 页 / 0.27 MByte
NXP(恩智浦)
12 页 / 0.11 MByte
器件 Datasheet 文档搜索
数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件