BFG196 数据手册 - Siemens Semiconductor（西门子）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 12V 集电极连续输出电流ICCollector Current(IC)| 100mA/0.1A 截止频率fTTranstion Frequency(fT)| 5GHz~7.5GHz 直流电流增益hFEDC Current Gain(hFE)| 50~200 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 800mW/0.8W Description & Applications| NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz 描述与应用| NPN硅RF晶体管 •低噪声，低失真宽带   天线放大器和电信   集电极电流高达1.5GHz系统   20mA到80毫安的 •功率放大器DECT和PCN系统 •FT =的7.5GHz  F =1.5分贝在900MHz