集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V
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●集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 15V
●集电极连续输出电流ICCollector Current(IC)| 30mA
●截止频率fTTranstion Frequency(fT)| 6Ghz
●直流电流增益hFEDC Current Gain(hFE)| 50~150
●管压降VCE（sat）Collector-Emitter Saturation Voltage| 400mV/0.4V
●耗散功率PcPower Dissipation| 200mW/0.2W
●Description & Applications| NPN Silicon Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
●描述与应用| NPN硅平面RF晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •铅（Pb）免费组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 RF放大器高达GHz范围内，专门为宽带 天线放大器。
