集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 12V 集电极连续输出电流ICCollector Current(IC)| 35mA 截止频率fTTranstion Frequency(fT)| 8Ghz 直流电流增益hFEDC Current Gain(hFE)| 50~200 管压降VCE(sat)Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 250mW/0.25W Description & Applications| NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 描述与应用| NPN硅RF晶体管 低噪声,高增益宽带放大器集电极电流从1 mA到20 mA fT = 8 GHz F = 1.2 dB at 900 MHz
Siemens Semiconductor(西门子)
6 页 / 0.65 MByte
Siemens Semiconductor(西门子)
7 页 / 0.05 MByte
Infineon(英飞凌)
NPN硅晶体管RF NPN Silicon RF Transistor
Siemens Semiconductor(西门子)
Infineon(英飞凌)
INFINEON BFR182WH6327XTSA1 晶体管 双极-射频, NPN, 12 V, 8 GHz, 250 mW, 35 mA, 70 hFE
Infineon(英飞凌)
INFINEON BFR182E6327HTSA1 射频晶体管, NPN, 12V, SOT-23
Infineon(英飞凌)
三极管(BJT) BFR182E6327 SOT-23
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