BFT25 数据手册 - NXP（恩智浦）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 8V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 5V 集电极连续输出电流ICCollector Current(IC)| 6.5mA 截止频率fTTranstion Frequency(fT)| 2.3GHz 直流电流增益hFEDC Current Gain(hFE)| 40 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 30mW Description & Applications| NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc.The transistor features low current consumption (100 uA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. 描述与应用| 2 GHz的宽带晶体管NPN 说明 NPN晶体管在一个塑料SOT23信封。 它的主要目的是利用低功耗射频放大器，如在口袋里的手机，传呼系统等。晶体管具有低电流消耗（100uA到1 mA），由于其高转换频率，它还具有优异的宽带性能和低噪声高频率。