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VND7N04TR-E
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VND7N04TR-E数据手册
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September 2013 Rev 2
1/17
17
VND7N04, VND7N04-1
VNK7N04FM
"OMNIFET":
Fully autoprotected power MOSFET
Features
Linear current limitation
Thermal shut down
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the power
MOSFET (analog driving)
Compatible with standard power MOSFET
Description
The VND7N04, VND7N04-1 and VNK7N04FM
are monolithic devices made using
STMicroeletronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Type V
clamp
R
DS(on)
I
lim
VND7N04
VND7N04-1
VNK7N04FM
42 V
42 V
42 V
0.14
0.14
0.14
7 A
7 A
7 A
Table 1. Device summary
Part number Order code
VND7N04
VND7N04, VND7N04-1-E,
VND7N04-E, VND7N0413TR,
VND7N04TR-E
VND7N04-1 VND7N04-1
VNK7N04FM VNK7N04FM
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VND7N04TR-E 数据手册

ST Microelectronics(意法半导体)
18 页 / 0.58 MByte
ST Microelectronics(意法半导体)
5 页 / 0.04 MByte

VND7N04 数据手册

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ST Microelectronics(意法半导体)
ST Microelectronics(意法半导体)
“ OMNIFET ”完全autoprotected功率MOSFET "OMNIFET"Fully autoprotected power MOSFET
ST Microelectronics(意法半导体)
“ OMNIFET ”完全autoprotected功率MOSFET "OMNIFET"Fully autoprotected power MOSFET
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