DTB143TK 数据手册 - ROHM Semiconductor（罗姆半导体）

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -500mA/0.5A 基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 电阻比(R1/R2) Resistance Ratio| 直流电流增益hFE DC Current Gain(hFE)| 100~600 截止频率fT Transtion Frequency(fT)| 200MHz 耗散功率Pc Power Dissipation| 0.2W/200mW Description & Applications| Feature •Digital transistors (built-in resistor) •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making device design easy 描述与应用| 特点 •数字晶体管（内置电阻） •内置启用偏置电阻器的逆变器电路的配置，而无需连接外部输入电阻（见等效电路）。 •偏置电阻组成的薄膜电阻完全隔离，允许输入的正偏压。他们也有优势，几乎完全消除了寄生效应。 •只有开/关条件需要设置操作，使装置的设计容易