类型 | 描述 |
---|
封装 | SOT-23 |
极性 | NPN |
击穿电压(集电极-发射极) | 50 V |
集电极最大允许电流 | 0.1A |
类型 | 描述 |
---|
产品生命周期 | Active |
最小包装数量 | 3000 |
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA/0.1A 基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 0.47 直流电流增益hFE DC Current Gain(hFE)| 80 截止频率fT Transtion Frequency(fT)| 250MHz 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| Features 1)Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making device design easy 5)Complementary PNP Types:DTA143J series 6)Lead free/RoHS compliant 描述与应用| 特性 1)内置偏置电阻 2)内置启用偏置电阻器的配置, 逆变电路无需连接外部输入电阻 3)偏置电阻组成的薄膜电阻完全隔离,允许负偏置输入。他们也有优势,几乎完全消除了寄生效应。 4)只有开/关条件需要设置操作,使装置的设计容易 5)互补PNP类型:DTA143J系列 6)无铅/ RoHS兼容
ROHM Semiconductor(罗姆半导体)
13 页 / 3.47 MByte
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ROHM Semiconductor(罗姆半导体)
ROHM Semiconductor(罗姆半导体)
ROHM Semiconductor(罗姆半导体)
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