反向电压VrReverse Voltage| 8V \---|--- 平均整流电流IoAVerage Rectified Current| 50mA 最大正向压降VFForward Voltage(Vf) | 300mV/0.3V 最大耗散功率PdPower dissipation| Description & Applications| · Low VF and high efficiency. · HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. · MPAK package is suitable for high density surface mounting and high speed assembly. · Silicon Schottky Barrier Diode for System Protection • Schottky Barrier Diodes in Series 描述与应用| ·低VF,高效率。 ·HSM107S串联配置防止电压过度,失去电力系统操作。 ·MPAK包装是适合高密度表面安装和高速汇编。 ·硅肖特基二极管,保护系统 •串联的肖特基二极管
HITACHI(日立)
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HITACHI(日立)
HSM107STL 串联肖特基二极管 8V 50mA 300mV/0.3V SOT-23/SC-59 marking/标记 C5 低压降
Renesas Electronics(瑞萨电子)
硅肖特基二极管的系统保护 Silicon Schottky Barrier Diode for System Protection
Renesas Electronics(瑞萨电子)
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