类型Type| 通用 General Purpose \---|--- 元件数Number of Elements| 2 输出类型Output Type| TTL, DTL, ECL, MOS and CMOS 电源电压,单/双 (±)Voltage - Supply, Single/Dual (±)| 2 V~36 V,±1 V~±18 V 输入失调电压(最大值)Voltage - Input Offset (Max)| 5mV 输入偏置电流(最大值)Current - Input Bias (Max)| 0.25µA 输出电流(典型值)Current - Output (Typ)| 16mA 静态电流(最大值)Current - Quiescent (Max)| 1mA CMRR,PSRR(典型值)CMRR, PSRR (Typ)| 传播延迟(最大值)Propagation Delay (Max)| 700ns 滞后Hysteresis| Description & Applications| FEATURES • Low Power Low Offset Voltage Dual Comparators • Wide supply— Voltage range: 2.0V to 36V — Single or dual supplies: ±1.0V to ±18V • Very low supply current drain (0.4 mA) — independent of supply voltage • Low input biasing current: 25 nA • Low input offset current: ±5 nA • Maximum offset voltage: ±3 mV • Input common-mode voltage range includes ground • Differential input voltage range equal to the power supply voltage • Low output saturation voltage,: 250 mV at 4 mA • Output voltage compatible with TTL, DTL, ECL, MOS and CMOS logic systems • Available in the 8-Bump (12 mil) micro SMD package • See AN-1112 for micro SMD considerations Advantages • High precision comparators • Reduced VOS drift over temperature • Eliminates need for dual supplies • Allows sensing near ground • Compatible with all forms of logic • Power drain suitable for battery operation 描述与应用| 特点 •低功耗低失调电压双比较器 •宽电源电压范围:2.0V至36V - 单或双电源:±1.0V至±18V •极低的电源电流消耗(0.4毫安) - 电源电压无关 •低输入偏置电流:25 nA的 •低输入偏置电流:±5 NA •最大失调电压:±3毫伏 •输入共模电压范围包括地面 •差分输入电压范围等于电源电压 •低输出饱和电压:250毫伏在4 mA •输出电压与TTL,DTL,ECL,MOS和CMOS逻辑系统兼容 •可在8焊球micro SMD封装(12 mil)的 •请参阅AN-1112微型SMD考虑 优点 •高精度比较器 •减少VOS温度漂移 •无需为双电源供电 •允许传感近地面 •兼容各种形式的逻辑 •电源漏适合电池操作
National Semiconductor(美国国家半导体)
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