ST Microelectronics(意法半导体)
51 页 / 0.33 MByte
Micron(镁光)
MICRON M29DW323DB70N6E 闪存, 引导块, 非, 32 Mbit, 4M x 8位 / 2M x 16位, CFI, 并行, TSOP, 48 引脚
ST Microelectronics(意法半导体)
32兆位4Mb的X8或X16的2Mb ,双银8:24 ,引导块3V电源快闪记忆体 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
ST Microelectronics(意法半导体)
32兆位4Mb的X8或X16的2Mb ,双银8:24 ,引导块3V电源快闪记忆体 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
ST Microelectronics(意法半导体)
32兆位4Mb的X8或X16的2Mb ,双银8:24 ,引导块3V电源快闪记忆体 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
ST Microelectronics(意法半导体)
32兆位4Mb的X8或X16的2Mb ,双银8:24 ,引导块3V电源快闪记忆体 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
ST Microelectronics(意法半导体)
32兆位4Mb的X8或X16的2Mb ,双银8:24 ,引导块3V电源快闪记忆体 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
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