类型 | 描述 |
---|
安装方式 | Through Hole |
封装 | IPAK |
极性 | N-CH |
漏源极电压(Vds) | 60 V |
连续漏极电流(Ids) | 12A |
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ON Semiconductor(安森美)
ON SEMICONDUCTOR NTD3055L104T4G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
ON Semiconductor(安森美)
N 通道功率 MOSFET,60V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
ON Semiconductor(安森美)
ON SEMICONDUCTOR NTD3055-094T4G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.084 ohm, 10 V, 2.9 V
ON Semiconductor(安森美)
N 通道功率 MOSFET,60V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
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ON SEMICONDUCTOR NTD3055-094-1G 场效应管, MOSFET, N沟道, 60V, 12A, DPAK-3
ON Semiconductor(安森美)
ON SEMICONDUCTOR NTD3055L104G 晶体管, MOSFET, N沟道, 12 A, 60 V, 104 mohm, 5 V, 1.6 V
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