集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 60V
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●集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 50V
●集电极连续输出电流ICCollector Current(IC)| 3A
●截止频率fTTranstion Frequency(fT)| 100MHz
●直流电流增益hFEDC Current Gain(hFE)| 200
●管压降VCE(sat)Collector-Emitter Saturation Voltage| 90mV~290mV
●耗散功率PcPower Dissipation| 750mW/0.75W
●Description & Applications| NPN transistor FEATURES • High current capabilities • Low VCEsat . APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applications such as the latest low supply voltage IC applications • All battery driven equipment to save battery power. DESCRIPTION NPN low VCEsat transistor in a SC-74 plastic package.
●描述与应用| NPN晶体管 特点 •高电流能力 •低VCESAT 。 应用 •重型电池供电设备(汽车, 电信与音频/视频)电机和照明等 司机 VCE监测的关键应用,如最新的低电源 电压IC应用 •所有电池驱动的设备,以节省电池电力。 说明 NPN低VCEsat 在SC-74塑料封装晶体管。