集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA/0.1A 基极输入电阻R1 Input Resistance(R1)| 2.2KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 0.047 直流电流增益hFE DC Current Gain(hFE)| 100 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) • Simplification of circuit design • Reduces number of components and board space 描述与应用| 特性 •内置偏置电阻R1和R2(典型值2.2和47 k) •简化电路设计 •减少元件数量和电路板空间
NXP(恩智浦)
18 页 / 0.83 MByte
NXP(恩智浦)
NPN电阻配备晶体管 NPN resistor-equipped transistor
Nexperia(安世)
PDTC123J 系列 50 V 100 mA 表面贴装 NPN 配备电阻 晶体管 - SOT-23-3
Nexperia(安世)
Nexperia PDTC123ET,215 NPN 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23 (TO-236AB)封装
Nexperia(安世)
NXP PDTC123JU,115 NPN 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:0.047, 3引脚 UMT封装
Nexperia(安世)
Nexperia PDTC123YU,115 NPN 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:0.22, 3引脚 SOT-323 (SC-70)封装
NXP(恩智浦)
NXP PDTC123JT,215 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 2.2 kohm, 47 kohm, SOT-23
Nexperia(安世)
NXP PDTC123YT,215 NPN 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:0.22, 3引脚 SOT-23封装
Nexperia(安世)
NXP PDTC123EU,115 NPN 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 UMT封装
NXP(恩智浦)
NXP PDTC123ET,215 单晶体管 双极, BRT, NPN, 50 V, 250 mW, 100 mA, 30 hFE
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