PMBF170 数据手册 - NXP（恩智浦）

最大源漏极电压Vds Drain-Source Voltage| 60V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 250mA/0.25A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 2.5Ω/Ohm 2.2A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.8-3.0V 耗散功率Pd Power Dissipation| 300mW/0.3W Description & Applications| N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed andbline transformer drivers. FEATURES • Direct interface to C-MOS,TTL,etc. • High-speed switching • No secondary breakdown 描述与应用| N沟道增强模式垂直D-MOS晶体管 说明 N沟道增强型垂直D-MOS晶体管在SOT23封装信封。作为一个设计用于使用 表面贴装器件（SMD）的薄和厚的薄膜电路与继电器，高速andbline变压器驱动器的应用 •直接连接到C-MOS，TTL等 •高速开关 •无二次击穿