PMBS3906 数据手册 - NXP（恩智浦）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| -40V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| −40V 集电极连续输出电流ICCollector Current(IC)| −100mA/-0.1A 截止频率fTTranstion Frequency(fT)| 150MHz 直流电流增益hFEDC Current Gain(hFE)| 100~300 管压降VCE（sat）Collector-Emitter SaturationVoltage| -400mV/-0.4V 耗散功率PcPoWer Dissipation| 250mW/0.25W Description & Applications| PNP general purpose transistor FEATURES • Low current • Low voltage • NPN complement: PMBS3904 APPLICATIONS • General purpose switching and amplification, e.g.telephony and professional communication equipment. 描述与应用| PNP通用晶体管 特点 •低电流 •低电压 •NPN补充：PMBS3904 应用 •通用开关和放大，的egtelephony和专业的通信设备。