RN1501 数据手册 - Toshiba（东芝）

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA Q1基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 4.7KΩ/Ohm Q1电阻比(R1/R2) Q1 Resistance Ratio| 1 Q2基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 4.7KΩ/Ohm Q2电阻比(R1/R2) Q2 Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 30 截止频率fT Transtion Frequency(fT)| 250MHz 耗散功率Pc Power Dissipation| 300mW/0.3W Description & Applications| Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Including two devices in SMV (super mini type with 5 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN2501~RN2506 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •东芝晶体管的硅NPN外延型（PCT工艺）包括两个设备中的SMV（超迷你型5导线） •借助内置的偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •互补RN2501~~ RN2506 应用 •开关，逆变电路，接口电路和驱动器电路应用