集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V
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●集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V
●集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A
●基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm
●基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm
●电阻比(R1/R2) Resistance Ratio| 1
●直流电流增益hFE DC Current Gain(hFE)| 50
●截止频率fT Transtion Frequency(fT)| 200MHz
●耗散功率Pc Power Dissipation| 0.1W/100mW
●Description & Applications| Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1101F~RN1106F Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
●描述与应用| 特点 •晶体管的硅PNP外延型（PCT工艺） •借助内置的偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •互补到RN1101F〜RN1106F的 应用 •开关，逆变电路，接口电路和驱动器电路应用
