最大源漏极电压VdsDrain-Source Voltage | 30V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage | ±20V 最大漏极电流IdDrain Current | 6A 源漏极导通电阻RdsDrain-Source On-State Resistance | 16mΩ~21mΩ VGS = 10 V , ID = 3 A 开启电压Vgs(th)Gate-Source Threshold Voltage | 1.1V~2.3V VDS = 10 V, ID = 1 mA 耗散功率PdPower Dissipation | 0.75W Description & Applications | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 5.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| =14 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 描述与应用 | 高效直流/直流转换器的应用程序 笔记本电脑的应用 便携设备应用程序 东芝硅n沟道MOS场效应晶体管(超高速U-MOSIII)类型 由于小和薄包占用空间小 高速开关 小闸极电荷:QSW = 5.5数控(typ)。 低漏源极导通电阻:RDS()= 16 m?(typ)。 高向前转移导纳:| yf | = 14年代(typ)。 低漏电流:ids = 10μA(max)(VDS = 30 V)
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