UN5211 数据手册 - Panasonic（松下）

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA/0.1A 基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 35 截止频率fT Transtion Frequency(fT)| 150MHz 耗散功率Pc Power Dissipation| 0.1W/100mW Description & Applications| Silicon NPN epitaxial planar transistr For digital circuits Features • Optimum for downsizing of the equipment and high-density mounting •Contribute for low power consumption 描述与应用| NPN硅外延平面晶体管 用于数字电路 特性 •最佳裁员的设备和高密度安装 •低功耗贡献