最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 12V 最大漏极电流Id Drain Current| 1.7A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs(th) Gate-Source Threshold Voltage| 耗散功率Pd Power Dissipation| 625mW/0.625W Description & Applications| V(BR)DSS=20V; RDS(ON)=0.18V; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package 描述与应用| V(BR)DSS =20V; RDS(ON)=0.18V,ID=1.7A 说明 Zetex的新一代高密度的MOSFET采用了独特的 结构,结合快速开关的低导通电阻的好处 速度。这使得它们成为理想的高效率,低电压,功率 管理应用程序。 •低导通电阻 •开关速度快 •低门槛 •低栅极驱动器 •SOT23封装
Zetex
ZXM61N02FTA N沟道MOSFET 20V 1.7A SOT-23/SC-59 marking/标记 N02 高速开关/低导通电阻
Diodes(美台)
DIODES INC. ZXM61N02F 晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
Diodes Zetex(捷特科)
N 通道 MOSFET,12V 至 28V,Diodes Inc
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