2SJ203 数据手册 - NEC（日本电气）

最大源漏极电压VdsDrain-Source Voltage| -16V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 7V 最大漏极电流IdDrain Current| -200mA/-0.2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 7Ω @-1A,-4V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1.2--2.2V 耗散功率PdPower Dissipation| 200mW/0.2W Description & Applications| MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance 描述与应用| MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻