2SJ610 数据手册 - Toshiba（东芝）

最大源漏极电压VdsDrain-Source Voltage| -250V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 1.85Ω @-10A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1.5--3.5V 耗散功率PdPower Dissipation| 20W Description & Applications| Features •Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) •High forward transfer admittance: Yfs = 1.8 S (typ.) • Low leakage current: IDSS = −100 µA (VDS = −250 V) • Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA) 描述与应用| •低漏源导通电阻RDS（ON）= 1.85Ω（典型值） •高正向转移导纳：的YFS=1.8 S（典型值） •低漏电流：IDSS=-100μA（VDS=-250 V） •增强模式：VTH=-1.5〜-3.5 V（VDS=10V，ID=1毫安）