2SK3107 数据手册 - NEC（日本电气）

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 100mA/0.1A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 3Ω/Ohm @10A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1-1.8V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Can be driven by a 2.5 V power source Low gate cut-off voltage 描述与应用| MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK3107是一种开关装置，可直接由一个驱动 2.5-V电源。 2SK3107具有优良的开关特性，适合用作一个高速数字电路中的开关器件。 特性 N沟道MOS场效应晶体管 用于开关 可以由一个2.5 V电源 低栅极截止电压