类型 | 描述 |
---|
封装 | TO-252 |
极性 | N-CH |
漏源极电压(Vds) | 100 V |
连续漏极电流(Ids) | 10A |
最大源漏极电压Vds Drain-Source Voltage | 100V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V 最大漏极电流Id Drain Current | 10A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.095Ω/Ohm @5A,10V 开启电压Vgs(th) Gate-Source Threshold Voltage | 3~5V 耗散功率Pd Power Dissipation | 20W Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive Applications Features Switching Regulators, for Audio Amplifier and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Enhancement-mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型(π-MOS七的) 开关稳压器,音频放大器和电机驱动应用 特性 开关稳压器,音频放大器和电机 驱动应用 低漏源导通电阻RDS(ON)= 95mΩ(典型值) 高正向转移导纳:| YFS|=6 S(典型值) 低漏电流:IDSS= 100μA(最大值)(VDS= 100 V) 增强模式:VTH =3.0到5.0 V(VDS=10 V,ID= 1mA)
Toshiba(东芝)
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