BF990A 数据手册 - NXP（恩智浦）

最大源漏极电压Vds Drain-Source Voltage| 18V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 最大漏极电流Id Drain Current| 30mA 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.3V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| N-channel dual-gate MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated diodes between gates and source. APPLICATIONS • RF applications such as: – Television tuners with 12 V supply voltage – Professional communication equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 描述与应用| N沟道双栅MOS-FET 耗尽型场效应晶体管在一个塑料SOT143 超小型封装，相互连接的源和衬底 特点 •防止过高的输入电压浪涌门和源之间的集成二极管。 应用 •射频应用，如： - 电视调谐器与12 V电源电压 - 专业的通信设备。 说明 SOT143超小型封装在一个塑料带相互连接的源极和衬底的耗尽型场效应晶体管。