BFG193 数据手册 - Infineon（英飞凌）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 12V 集电极连续输出电流ICCollector Current(IC)| 80mA 截止频率fTTranstion Frequency(fT)| 6GHz~8GHz 直流电流增益hFEDC Current Gain(hFE)| 70~140 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 600mW/0.6W Description & Applications| NPN Silicon RF Transistor

● • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

● Short term description 描述与应用| NPN硅RF晶体管

● •低噪声，高增益放大器高达2 GHz •对于线性宽带放大器 •英尺= 8 GHz时，F = 1分贝在900 MHz •无铅（符合RoHS）包1） •符合AEC Q101

●短期描述