IRFR214 数据手册 - International Rectifier（国际整流器）

最大源漏极电压Vds Drain-Source Voltage| 400V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 30V 最大漏极电流Id Drain Current| 1.7A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 3.4Ω/Ohm @850mA,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 2.0-4.0V 耗散功率Pd Power Dissipation| 2.5W Description & Applications| DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. • 1.7A, 400V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 7.7 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability 描述与应用| 说明 Vishay的第三代功率MOSFET提供 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 该DPAK是专为表面安装使用蒸汽相，红外线，或波峰焊技术。直 导致通孔版本（IRFU，赐福系列）安装应用程序。功耗水平，直至1.5 W 典型的表面贴装应用中是可能的。 •低栅极电荷（典型7.7 nC） •低Crss（典型6.0 pF） •快速开关 •100％雪崩测试 •改进的dv / dt能力