最大源漏极电压VdsDrain-Source Voltage| 25v \---|--- 栅源极击穿电压V(BR)GSGate-Source Voltage| -25v 漏极电流(Vgs=0V)IDSSDrain Current| 12~30ma 关断电压Vgs(off)Gate-Source Cut-off Voltage| -1~-4v 耗散功率PdPower Dissipation| 225mW/0.225W Description & Applications| N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. 描述与应用| N沟道射频放大器 该设备是专为VHF/ UHF放大器,振荡器和混频器 的应用程序。共栅极放大器,16分贝在100 MHz和 12 dB,在450兆赫频率可以实现的。
Fairchild(飞兆/仙童)
13 页 / 0.54 MByte
ON Semiconductor(安森美)
JFET VHF / UHF放大器晶体管 JFET VHF/UHF Amplifier Transistor
Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR MMBFJ309. 射频晶体管, JFET, 25V, 3-SOT-23
ON Semiconductor(安森美)
ON SEMICONDUCTOR MMBFJ309LT1G 晶体管, JFET, JFET, -25 V, 12 mA, 30 mA, -4 V, SOT-23, JFET
ON Semiconductor(安森美)
JFET - VHF / UHF放大器晶体管N通道 JFET - VHF/UHF Amplifier Transistor N-Channel
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