最大源漏极电压VdsDrain-Source Voltage| -8V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| -1.4A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.065Ω @-1A,-4.5V 开启电压Vgs(th)Gate-Source Threshold Voltage| -0.45V 耗散功率PdPower Dissipation| 2.9W Description & Applications| Features • Leading Trench Technology for Low RDS(on) Extending Battery Life • −1.8 V Rated for Low Voltage Gate Drive • SC−70 Surface Mount for Small Footprint (2 x 2 mm) • Pb−Free Package is Available 描述与应用| •领导沟道技术低的RDS(on) 延长电池寿命 •-1.8 V额定低电压栅极驱动 SC-70小尺寸表面贴装(2×2毫米) •无铅包装是可用
ON Semiconductor(安森美)
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