RN1108 数据手册 - Toshiba（东芝）

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA/0.1A 基极输入电阻R1 Input Resistance(R1)| 22KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 0.468 直流电流增益hFE DC Current Gain(hFE)| 80 截止频率fT Transtion Frequency(fT)| 250MHz 耗散功率Pc Power Dissipation| 0.1W/100mW Description & Applications| Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2107~2109 描述与应用| 开关，逆变电路，接口电路 和驱动器电路应用 借助内置的偏置电阻 简化电路设计 数量减少了零件和制造工艺 互补RN2107〜2109