最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 12V 最大漏极电流Id Drain Current| 6A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.028Ω/Ohm @3A,10V 开启电压Vgs(th) Gate-Source Threshold Voltage| 0.5-1.2V 耗散功率Pd Power Dissipation| 2.2W Description & Applications| Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RS (ON) = 21 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) 描述与应用| 笔记本电脑应用 便携式设备的应用 低漏源导通电阻RDS(ON)= 21mΩ(典型值) 高正向转移导纳:| YFS|=10 S(典型值) 低漏电流:IDSS= 10μA(最大值)(VDS= 30 V) 增强模式:VTH =0.5〜1.2 V(VDS=10 V,ID=200μA)
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