类型 | 描述 |
---|
封装 | PS-8 |
极性 | N-CH |
漏源极电压(Vds) | 30 V |
连续漏极电流(Ids) | 5.5A |
最大源漏极电压VdsDrain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| 5.5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 19mΩ@ VGS = 4.5V, ID = 2.8A 开启电压Vgs(th)Gate-Source Threshold Voltage| 0.7~1.4V 耗散功率PdPower Dissipation| 1.48W Description & Applications| TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) -Portable Equipment Applications -Motor Drive Applications -DC/DC Converters • Lead (Pb)-free • Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.) • Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) • Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 μA) 描述与应用| 东芝场效应晶体管硅N沟道MOS型(U-MOSIV) -便携式设备的应用 -电机驱动应用 -DC/DC转换器 •低漏源导通电阻RDS(ON)= 19mΩ(典型值) •高正向转移导纳:| YFS|=20 S(典型值) •低漏电流IDSS= 10μA(最大)(VDS=30 V) •增强型号:VTH=0.7〜1.4V (VDS=10V,ID=200μA)
Toshiba(东芝)
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