UMH4 数据手册 - ROHM Semiconductor（罗姆半导体）

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V 集电极连续输出电流IC Collector Current(IC) | 100mA Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Q1电阻比(R1/R2) Q1 Resistance Ratio | Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Q2电阻比(R1/R2) Q2 Resistance Ratio | 直流电流增益hFE DC Current Gain(hFE) | 100~600 截止频率fT Transtion Frequency(fT) | 250MHz 耗散功率Pc Power Dissipation | 150mW/0.15W Description & Applications | Features •General purpose(dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package. 描述与应用 | 特点 •通用（双数字晶体管） •两个DTC114T的在EMT或UMT或SMT封装的芯片