集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 10V
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●集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 4.5V
●集电极连续输出电流ICCollector Current(IC)| 12mA
●截止频率fTTranstion Frequency(fT)| 25GHz
●直流电流增益hFEDC Current Gain(hFE)| 50~150
●管压降VCE（sat）Collector-Emitter Saturation Voltage|
●耗散功率PcPower Dissipation| 55mW
●Description & Applications| NPN Silicon RF Transistor For low current applications Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms= 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line
●描述与应用| NPN硅RF晶体管 对于低电流应用 最小封装为1.4×0.8×0.59毫米 噪声系数F =1.25 dB，
●（在1.8 GHz时） 杰出GMS=23在1.8 GHz 过渡频率fT= 25 GHz的 黄金金属的高可靠性 SIEGET25 GHz的FT - 线路
