BFR183T 数据手册 - Infineon（英飞凌）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V

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●集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 12V

●集电极连续输出电流ICCollector Current(IC)| 65mA

●截止频率fTTranstion Frequency(fT)| 8Ghz

●直流电流增益hFEDC Current Gain(hFE)| 50~200

●管压降VCE（sat）Collector-Emitter Saturation Voltage|

●耗散功率PcPower Dissipation| 250mW/0.25W

●Description & Applications| NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz

●描述与应用| NPN硅RF晶体管 低噪声，高增益宽带放大器集电极电流从2 mA到30 mA fT = 8 GHz F = 1.2 dB at 900 MHz