SSM6E01TU 数据手册 - Toshiba（东芝）

最大源漏极电压VdsDrain-Source Voltage| -12V/20V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 12V/10V 最大漏极电流IdDrain Current| -10A/50mA 源漏极导通电阻RdsDrain-Source On-State Resistance| 240mΩ@ VGS = -2.5V, ID = -500mA /1Ω@ VGS = 2.5V, ID = 10mA 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4~-1.1V/0.7~1.3V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) Load Switch Applications P-channel MOSFET and N-channel MOSFET incorporated into one package. Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation 描述与应用| TOSHIBA多芯片设备 硅P沟道MOS类型（U-MOS II）+ N沟道MOS类型（平面） 负载开关应用中 P沟道MOSFET和N沟道MOSFET的纳入一包装。 低功耗由于P沟道MOSFET，具有低RDS（ON）和低电压操作