类型 | 描述 |
---|
封装 | ES-6 |
极性 | N+P |
漏源极电压(Vds) | 20 V |
连续漏极电流(Ids) | 0.5A/0.33A |
最大源漏极电压VdsDrain-Source Voltage| 20V/-20V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 10V/8V 最大漏极电流IdDrain Current| 500mA/-330mA 源漏极导通电阻RdsDrain-Source On-State Resistance| 630mΩ@ VGS = 5.0V, ID = 200mA/ 1310mΩ@ VGS = -4.5V, ID = -100mA 开启电压Vgs(th)Gate-Source Threshold Voltage| 0.35~1.0V/-0.3~1.0V 耗散功率PdPower Dissipation| 150mW/0.15W Description & Applications| TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V) Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) • Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V) 描述与应用| 东芝场效应晶体管的硅N / P沟道MOS型 ○高速开关应用 •1.5-V驱动器 •低导通电阻Q1 N沟道:RON=1.52Ω(最大值)(@ VGS= 1.5 V) RON =1.14Ω(最大)(@ VGS=1.8 V) RON =0.85Ω(最大值)(@ VGS=2.5 V) RON =0.66Ω(最大值)(@ VGS=4.5 V) RON =0.63Ω(最大)(@ VGS= 5.0 V) •P沟道:RON =3.60Ω(最大)(@ VGS=-1.5 V) RON =2.70Ω(最大值)(@ VGS=-1.8 V) RON =1.60Ω(最大值)(@ VGS=-2.8 V) RON =1.31Ω(最大值)(@ VGS= -4.5 V)
Toshiba(东芝)
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Toshiba(东芝)
SSM6L36FE 复合场效应管 20V/-20V 500mA/-330mA SOT-563/ES6 marking/标记 LL4 高速开关 1.5V驱动
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