2SC3545 数据手册 - NEC（日本电气）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V 集电极连续输出电流ICCollector Current(IC) | 50mA 截止频率fTTranstion Frequency(fT) | 2MHz 直流电流增益hFEDC Current Gain(hFE) | 70~140 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V 耗散功率PcPower Dissipation | 150mW/0.15W Description & Applications | UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor, intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. It is designed for use in small type equipments especially recommended for Hybrid Integrated Circuit and other applications. FEATURES • High Gain Bandwidth Procuct; • Low Collector to Base Time Constant. • Low Feedback Capacitance. 描述与应用 | UHF振荡器和混频器 NPN硅外延晶体管 说明 2SC3545是NPN硅外延晶体管，用于作为超高频振荡器和混频器的TV接收机的调谐器中使用的。该器件具有对电源电压的任何变化和环境温度的稳定的振荡频率漂移小。 它是专为小型设备中使用特别推荐用于混合集成电路和其它应用。 特点 •高增益带宽的替代产品; •低集电极到基地时间常数。 •低反馈电容。